Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries

Yongheng Zhou, Xin Zhou, Xiang-Long Yu (), Zihan Liang, Xiaoxu Zhao, Taihong Wang, Jinshui Miao () and Xiaolong Chen ()
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Yongheng Zhou: Southern University of Science and Technology
Xin Zhou: National University of Singapore
Xiang-Long Yu: Southern University of Science and Technology
Zihan Liang: Southern University of Science and Technology
Xiaoxu Zhao: Peking University
Taihong Wang: Southern University of Science and Technology
Jinshui Miao: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Xiaolong Chen: Southern University of Science and Technology

Nature Communications, 2024, vol. 15, issue 1, 1-7

Abstract: Abstract The photovoltaic effect lies at the heart of eco-friendly energy harvesting. However, the conversion efficiency of traditional photovoltaic effect utilizing the built-in electric effect in p-n junctions is restricted by the Shockley-Queisser limit. Alternatively, intrinsic/bulk photovoltaic effect (IPVE/BPVE), a second-order nonlinear optoelectronic effect arising from the broken inversion symmetry of crystalline structure, can overcome this theoretical limit. Here, we uncover giant and robust IPVE in one-dimensional (1D) van der Waals (vdW) grain boundaries (GBs) in a layered semiconductor, ReS2. The IPVE-induced photocurrent densities in vdW GBs are among the highest reported values compared with all kinds of material platforms. Furthermore, the IPVE-induced photocurrent is gate-tunable with a polarization-independent component along the GBs, which is preferred for energy harvesting. The observed IPVE in vdW GBs demonstrates a promising mechanism for emerging optoelectronics applications.

Date: 2024
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DOI: 10.1038/s41467-024-44792-4

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