Unraveling the crucial role of trace oxygen in organic semiconductors

Yinan Huang, Kunjie Wu, Yajing Sun, Yongxu Hu, Zhongwu Wang, Liqian Yuan, Shuguang Wang, Deyang Ji, Xiaotao Zhang, Huanli Dong, Zhongmiao Gong, Zhiyun Li, Xuefei Weng, Rong Huang, Yi Cui, Xiaosong Chen (), Liqiang Li () and Wenping Hu
Additional contact information
Yinan Huang: Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University
Kunjie Wu: Chinese Academy of Sciences
Yajing Sun: Tianjin University
Yongxu Hu: Tianjin University
Zhongwu Wang: Tianjin University
Liqian Yuan: Tianjin University
Shuguang Wang: Tianjin University
Deyang Ji: Tianjin University
Xiaotao Zhang: Tianjin University
Huanli Dong: Chinese Academy of Sciences
Zhongmiao Gong: Chinese Academy of Sciences
Zhiyun Li: Chinese Academy of Sciences
Xuefei Weng: Chinese Academy of Sciences
Rong Huang: Chinese Academy of Sciences
Yi Cui: Chinese Academy of Sciences
Xiaosong Chen: Tianjin University
Liqiang Li: Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University
Wenping Hu: Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Optoelectronic properties of semiconductors are significantly modified by impurities at trace level. Oxygen, a prevalent impurity in organic semiconductors (OSCs), has long been considered charge-carrier traps, leading to mobility degradation and stability problems. However, this understanding relies on the conventional deoxygenation methods, by which oxygen residues in OSCs are inevitable. It implies that the current understanding is questionable. Here, we develop a non-destructive deoxygenation method (i.e., de-doping) for OSCs by a soft plasma treatment, and thus reveal that trace oxygen significantly pre-empties the donor-like traps in OSCs, which is the origin of p-type characteristics exhibited by the majority of these materials. This insight is completely opposite to the previously reported carrier trapping and can clarify some previously unexplained organic electronics phenomena. Furthermore, the de-doping results in the disappearance of p-type behaviors and significant increase of n-type properties, while re-doping (under light irradiation in O2) can controllably reverse the process. Benefiting from this, the key electronic characteristics (e.g., polarity, conductivity, threshold voltage, and mobility) can be precisely modulated in a nondestructive way, expanding the explorable property space for all known OSC materials.

Date: 2024
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DOI: 10.1038/s41467-024-44897-w

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