Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions

Yueyang Jia, Qianqian Yang, Yue-Wen Fang (), Yue Lu, Maosong Xie, Jianyong Wei, Jianjun Tian, Linxing Zhang () and Rui Yang ()
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Yueyang Jia: University of Michigan—Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University
Qianqian Yang: University of Science and Technology Beijing
Yue-Wen Fang: University of the Basque Country (UPV/EHU)
Yue Lu: University of Technology
Maosong Xie: University of Michigan—Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University
Jianyong Wei: University of Michigan—Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University
Jianjun Tian: University of Science and Technology Beijing
Linxing Zhang: University of Science and Technology Beijing
Rui Yang: University of Michigan—Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectric structural instability and large depolarization field. Here we report ferroelectric tunnel junctions based on samarium-substituted layered bismuth oxide, which can maintain tunnelling electroresistance of 7 × 105 with the samarium-substituted bismuth oxide film down to one nanometer, three orders of magnitude higher than previous reports with such thickness, owing to efficient barrier modulation by the large ferroelectric polarization. These ferroelectric tunnel junctions demonstrate up to 32 resistance states without any write-verify technique, high endurance (over 5 × 109), high linearity of conductance modulation, and long retention time (10 years). Furthermore, tunnelling electroresistance over 109 is achieved in ferroelectric tunnel junctions with 4.6-nanometer samarium-substituted bismuth oxide layer, which is higher than commercial flash memories. The results show high potential towards multi-level and reliable non-volatile memories.

Date: 2024
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DOI: 10.1038/s41467-024-44927-7

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