Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance

Yuxuan Zhang, You Meng (), Liqiang Wang, Changyong Lan, Quan Quan, Wei Wang, Zhengxun Lai, Weijun Wang, Yezhan Li, Di Yin, Dengji Li, Pengshan Xie, Dong Chen, Zhe Yang, SenPo Yip, Yang Lu, Chun-Yuen Wong () and Johnny C. Ho ()
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Yuxuan Zhang: City University of Hong Kong
You Meng: City University of Hong Kong
Liqiang Wang: City University of Hong Kong
Changyong Lan: University of Electronic Science and Technology of China
Quan Quan: City University of Hong Kong
Wei Wang: City University of Hong Kong
Zhengxun Lai: City University of Hong Kong
Weijun Wang: City University of Hong Kong
Yezhan Li: City University of Hong Kong
Di Yin: City University of Hong Kong
Dengji Li: City University of Hong Kong
Pengshan Xie: City University of Hong Kong
Dong Chen: City University of Hong Kong
Zhe Yang: City University of Hong Kong
SenPo Yip: Kyushu University
Yang Lu: The University of Hong Kong
Chun-Yuen Wong: City University of Hong Kong
Johnny C. Ho: City University of Hong Kong

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.

Date: 2024
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DOI: 10.1038/s41467-024-44970-4

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