Manipulating hyperbolic transient plasmons in a layered semiconductor

Rao Fu, Yusong Qu, Mengfei Xue (), Xinghui Liu, Shengyao Chen, Yongqian Zhao, Runkun Chen, Boxuan Li, Hongming Weng, Qian Liu (), Qing Dai () and Jianing Chen ()
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Rao Fu: University of Chinese Academy of Sciences
Yusong Qu: University of Chinese Academy of Sciences
Mengfei Xue: Suzhou Laboratory
Xinghui Liu: Shanxi University
Shengyao Chen: Nankai University
Yongqian Zhao: University of Chinese Academy of Sciences
Runkun Chen: State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences
Boxuan Li: University of Chinese Academy of Sciences
Hongming Weng: University of Chinese Academy of Sciences
Qian Liu: University of Chinese Academy of Sciences
Qing Dai: University of Chinese Academy of Sciences
Jianing Chen: University of Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Anisotropic materials with oppositely signed dielectric tensors support hyperbolic polaritons, displaying enhanced electromagnetic localization and directional energy flow. However, the most reported hyperbolic phonon polaritons are difficult to apply for active electro-optical modulations and optoelectronic devices. Here, we report a dynamic topological plasmonic dispersion transition in black phosphorus via photo-induced carrier injection, i.e., transforming the iso-frequency contour from a pristine ellipsoid to a non-equilibrium hyperboloid. Our work also demonstrates the peculiar transient plasmonic properties of the studied layered semiconductor, such as the ultrafast transition, low propagation losses, efficient optical emission from the black phosphorus’s edges, and the characterization of different transient plasmon modes. Our results may be relevant for the development of future optoelectronic applications.

Date: 2024
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DOI: 10.1038/s41467-024-44971-3

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