A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions

Yuan Yuan (), Yiwei Peng, Wayne V. Sorin, Stanley Cheung, Zhihong Huang, Di Liang, Marco Fiorentino and Raymond G. Beausoleil
Additional contact information
Yuan Yuan: Hewlett Packard Labs, Hewlett Packard Enterprise
Yiwei Peng: Hewlett Packard Labs, Hewlett Packard Enterprise
Wayne V. Sorin: Hewlett Packard Labs, Hewlett Packard Enterprise
Stanley Cheung: Hewlett Packard Labs, Hewlett Packard Enterprise
Zhihong Huang: Hewlett Packard Labs, Hewlett Packard Enterprise
Di Liang: Hewlett Packard Labs, Hewlett Packard Enterprise
Marco Fiorentino: Hewlett Packard Labs, Hewlett Packard Enterprise
Raymond G. Beausoleil: Hewlett Packard Labs, Hewlett Packard Enterprise

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects.

Date: 2024
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DOI: 10.1038/s41467-024-45301-3

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