Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

Yudi Dai, Junlin Xiong, Yanfeng Ge, Bin Cheng (), Lizheng Wang, Pengfei Wang, Zenglin Liu, Shengnan Yan, Cuiwei Zhang, Xianghan Xu, Youguo Shi, Sang-Wook Cheong, Cong Xiao (), Shengyuan A. Yang, Shi-Jun Liang () and Feng Miao ()
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Yudi Dai: Nanjing University
Junlin Xiong: Nanjing University
Yanfeng Ge: Singapore University of Technology and Design
Bin Cheng: Nanjing University of Science and Technology
Lizheng Wang: Nanjing University
Pengfei Wang: Nanjing University
Zenglin Liu: Nanjing University
Shengnan Yan: Nanjing University
Cuiwei Zhang: Chinese Academy of Sciences
Xianghan Xu: The State University of New Jersey
Youguo Shi: Chinese Academy of Sciences
Sang-Wook Cheong: The State University of New Jersey
Cong Xiao: University of Macau, Taipa
Shengyuan A. Yang: University of Macau, Taipa
Shi-Jun Liang: Nanjing University
Feng Miao: Nanjing University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.

Date: 2024
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DOI: 10.1038/s41467-024-45318-8

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