Giant electric field-induced second harmonic generation in polar skyrmions

Sixu Wang, Wei Li, Chenguang Deng, Zijian Hong (), Han-Bin Gao, Xiaolong Li, Yueliang Gu, Qiang Zheng (), Yongjun Wu, Paul G. Evans, Jing-Feng Li, Ce-Wen Nan and Qian Li ()
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Sixu Wang: Tsinghua University
Wei Li: Tsinghua University
Chenguang Deng: Tsinghua University
Zijian Hong: Zhejiang University
Han-Bin Gao: National Center for Nanoscience and Technology
Xiaolong Li: Chinese Academy of Sciences
Yueliang Gu: Chinese Academy of Sciences
Qiang Zheng: National Center for Nanoscience and Technology
Yongjun Wu: Zhejiang University
Paul G. Evans: University of Wisconsin-Madison
Jing-Feng Li: Tsinghua University
Ce-Wen Nan: Tsinghua University
Qian Li: Tsinghua University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Electric field-induced second harmonic generation allows electrically controlling nonlinear light-matter interactions crucial for emerging integrated photonics applications. Despite its wide presence in materials, the figures-of-merit of electric field-induced second harmonic generation are yet to be elevated to enable novel device functionalities. Here, we show that the polar skyrmions, a topological phase spontaneously formed in PbTiO3/SrTiO3 ferroelectric superlattices, exhibit a high comprehensive electric field-induced second harmonic generation performance. The second-order nonlinear susceptibility and modulation depth, measured under non-resonant 800 nm excitation, reach ~54.2 pm V−1 and ~664% V−1, respectively, and high response bandwidth (higher than 10 MHz), wide operating temperature range (up to ~400 K) and good fatigue resistance (>1010 cycles) are also demonstrated. Through combined in-situ experiments and phase-field simulations, we establish the microscopic links between the exotic polarization configuration and field-induced transition paths of the skyrmions and their electric field-induced second harmonic generation response. Our study not only presents a highly competitive thin-film material ready for constructing on-chip devices, but opens up new avenues of utilizing topological polar structures in the fields of photonics and optoelectronics.

Date: 2024
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DOI: 10.1038/s41467-024-45755-5

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