Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Meizhuang Liu (), Jian Gou, Zizhao Liu, Zuxin Chen, Yuliang Ye, Jing Xu, Xiaozhi Xu, Dingyong Zhong, Goki Eda and Andrew T. S. Wee ()
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Meizhuang Liu: South China Normal University
Jian Gou: National University of Singapore
Zizhao Liu: Sun Yat-sen University
Zuxin Chen: South China Normal University
Yuliang Ye: South China Normal University
Jing Xu: South China Normal University
Xiaozhi Xu: South China Normal University
Dingyong Zhong: Sun Yat-sen University
Goki Eda: National University of Singapore
Andrew T. S. Wee: National University of Singapore

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.

Date: 2024
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DOI: 10.1038/s41467-024-46087-0

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