Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park and Hyunsoo Yang ()
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Qu Yang: National University of Singapore
Donghyeon Han: Korea Advanced Institute of Science and Technology (KAIST)
Shishun Zhao: National University of Singapore
Jaimin Kang: Korea Advanced Institute of Science and Technology (KAIST)
Fei Wang: National University of Singapore
Sung-Chul Lee: Samsung Electronics Co. Ltd., Hwaseong
Jiayu Lei: National University of Singapore
Kyung-Jin Lee: Korea Advanced Institute of Science and Technology (KAIST)
Byong-Guk Park: Korea Advanced Institute of Science and Technology (KAIST)
Hyunsoo Yang: National University of Singapore

Nature Communications, 2024, vol. 15, issue 1, 1-6

Abstract: Abstract Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and associated endurance issues. A potential alternative to STT is spin-orbit torque (SOT). However, for practical, high-speed SOT devices, it must satisfy three conditions simultaneously, i.e., field-free switching at short current pulses, short incubation delay, and low switching current. Here, we demonstrate field-free SOT switching at sub-ns timescales in a CoFeB/Ti/CoFeB ferromagnetic trilayer, which satisfies all three conditions. In this trilayer, the bottom magnetic layer or its interface generates spin currents with polarizations in both in-plane and out-of-plane components. The in-plane component reduces the incubation time, while the out-of-plane component realizes field-free switching at a low current. Our results offer a field-free SOT solution for energy-efficient scalable MRAM applications.

Date: 2024
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DOI: 10.1038/s41467-024-46113-1

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