Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Jeongwon Park, Seung Jae Kwak, Sumin Kang, Saeyoung Oh, Bongki Shin, Gichang Noh, Tae Soo Kim, Changhwan Kim, Hyeonbin Park, Seung Hoon Oh, Woojin Kang, Namwook Hur, Hyun-Jun Chai, Minsoo Kang, Seongdae Kwon, Jaehyun Lee, Yongjoon Lee, Eoram Moon, Chuqiao Shi, Jun Lou, Won Bo Lee, Joon Young Kwak, Heejun Yang, Taek-Mo Chung, Taeyong Eom, Joonki Suh, Yimo Han, Hu Young Jeong, YongJoo Kim () and Kibum Kang ()
Additional contact information
Jeongwon Park: Korea Advanced Institute of Science and Technology (KAIST)
Seung Jae Kwak: Seoul National University (SNU)
Sumin Kang: Korea Advanced Institute of Science and Technology (KAIST)
Saeyoung Oh: Ulsan National Institute of Science and Technology (UNIST)
Bongki Shin: Rice University
Gichang Noh: Korea Advanced Institute of Science and Technology (KAIST)
Tae Soo Kim: Korea Advanced Institute of Science and Technology (KAIST)
Changhwan Kim: Ulsan National Institute of Science and Technology (UNIST)
Hyeonbin Park: Korea Advanced Institute of Science and Technology (KAIST)
Seung Hoon Oh: Korea Research Institute of Chemical Technology (KRICT)
Woojin Kang: Seoul National University (SNU)
Namwook Hur: Ulsan National Institute of Science and Technology (UNIST)
Hyun-Jun Chai: Korea Advanced Institute of Science and Technology (KAIST)
Minsoo Kang: Korea Advanced Institute of Science and Technology (KAIST)
Seongdae Kwon: Korea Advanced Institute of Science and Technology (KAIST)
Jaehyun Lee: Korea Advanced Institute of Science and Technology (KAIST)
Yongjoon Lee: Korea Advanced Institute of Science and Technology (KAIST)
Eoram Moon: Korea Advanced Institute of Science and Technology (KAIST)
Chuqiao Shi: Rice University
Jun Lou: Rice University
Won Bo Lee: Seoul National University (SNU)
Joon Young Kwak: Ewha Womans University
Heejun Yang: Korea Advanced Institute of Science and Technology (KAIST)
Taek-Mo Chung: Korea Research Institute of Chemical Technology (KRICT)
Taeyong Eom: Korea Research Institute of Chemical Technology (KRICT)
Joonki Suh: Ulsan National Institute of Science and Technology (UNIST)
Yimo Han: Rice University
Hu Young Jeong: Ulsan National Institute of Science and Technology (UNIST)
YongJoo Kim: Korea University
Kibum Kang: Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including Al2O3, HfO2, Ru, Te, and Sb2Se3.

Date: 2024
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DOI: 10.1038/s41467-024-46293-w

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