Intragrain impurity annihilation for highly efficient and stable perovskite solar cells
Songhua Cai (),
Zhipeng Li,
Yalan Zhang,
Tanghao Liu,
Peng Wang,
Ming-Gang Ju (),
Shuping Pang (),
Shu Ping Lau,
Xiao Cheng Zeng and
Yuanyuan Zhou ()
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Songhua Cai: The Hong Kong Polytechnic University, Kowloon
Zhipeng Li: Chinese Academy of Sciences
Yalan Zhang: The Hong Kong University of Science and Technology, Clear Water Bay
Tanghao Liu: Hong Kong Baptist University, Kowloon
Peng Wang: University of Warwick
Ming-Gang Ju: Southeast University
Shuping Pang: Chinese Academy of Sciences
Shu Ping Lau: The Hong Kong Polytechnic University, Kowloon
Xiao Cheng Zeng: City University of Hong Kong, Kowloon
Yuanyuan Zhou: The Hong Kong University of Science and Technology, Clear Water Bay
Nature Communications, 2024, vol. 15, issue 1, 1-10
Abstract:
Abstract Intragrain impurities can impart detrimental effects on the efficiency and stability of perovskite solar cells, but they are indiscernible to conventional characterizations and thus remain unexplored. Using in situ scanning transmission electron microscopy, we reveal that intragrain impurity nano-clusters inherited from either the solution synthesis or post-synthesis storage can revert to perovskites upon irradiation stimuli, leading to the counterintuitive amendment of crystalline grains. In conjunction with computational modelling, we atomically resolve crystallographic transformation modes for the annihilation of intragrain impurity nano-clusters and probe their impacts on optoelectronic properties. Such critical fundamental findings are translated for the device advancement. Adopting a scanning laser stimulus proven to heal intragrain impurity nano-clusters, we simultaneously boost the efficiency and stability of formamidinium-cesium perovskite solar cells, by virtual of improved optoelectronic properties and relaxed intra-crystal strain, respectively. This device engineering, inspired and guided by atomic-scale in situ microscopic imaging, presents a new prototype for solar cell advancement.
Date: 2024
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DOI: 10.1038/s41467-024-46588-y
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