Atomically precise engineering of spin–orbit polarons in a kagome magnetic Weyl semimetal

Hui Chen, Yuqing Xing, Hengxin Tan, Li Huang, Qi Zheng, Zihao Huang, Xianghe Han, Bin Hu, Yuhan Ye, Yan Li, Yao Xiao, Hechang Lei, Xianggang Qiu, Enke Liu, Haitao Yang, Ziqiang Wang, Binghai Yan and Hong-Jun Gao ()
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Hui Chen: Chinese Academy of Sciences
Yuqing Xing: Chinese Academy of Sciences
Hengxin Tan: Weizmann Institute of Science
Li Huang: Chinese Academy of Sciences
Qi Zheng: Chinese Academy of Sciences
Zihao Huang: Chinese Academy of Sciences
Xianghe Han: Chinese Academy of Sciences
Bin Hu: Chinese Academy of Sciences
Yuhan Ye: Chinese Academy of Sciences
Yan Li: Chinese Academy of Sciences
Yao Xiao: Chinese Academy of Sciences
Hechang Lei: Renmin University of China
Xianggang Qiu: Chinese Academy of Sciences
Enke Liu: Chinese Academy of Sciences
Haitao Yang: Chinese Academy of Sciences
Ziqiang Wang: Boston College
Binghai Yan: Weizmann Institute of Science
Hong-Jun Gao: Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Atomically precise defect engineering is essential to manipulate the properties of emerging topological quantum materials for practical quantum applications. However, this remains challenging due to the obstacles in modifying the typically complex crystal lattice with atomic precision. Here, we report the atomically precise engineering of the vacancy-localized spin–orbit polarons in a kagome magnetic Weyl semimetal Co3Sn2S2, using scanning tunneling microscope. We achieve the step-by-step repair of the selected vacancies, leading to the formation of artificial sulfur vacancies with elaborate geometry. We find that that the bound states localized around these vacancies undergo a symmetry dependent energy shift towards Fermi level with increasing vacancy size. As the vacancy size increases, the localized magnetic moments of spin–orbit polarons become tunable and eventually become itinerantly negative due to spin–orbit coupling in the kagome flat band. These findings provide a platform for engineering atomic quantum states in topological quantum materials at the atomic scale.

Date: 2024
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DOI: 10.1038/s41467-024-46729-3

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