Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor

Feng Wang, Wangqiang Shen, Yuan Shui, Jun Chen, Huaiqiang Wang, Rui Wang, Yuyuan Qin, Xuefeng Wang, Jianguo Wan, Minhao Zhang (), Xing Lu (), Tao Yang () and Fengqi Song ()
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Feng Wang: Nanjing University
Wangqiang Shen: Huazhong University of Science and Technology
Yuan Shui: Xi’an Jiaotong University
Jun Chen: Nanjing University
Huaiqiang Wang: Nanjing Normal University
Rui Wang: Nanjing University
Yuyuan Qin: Nanjing University
Xuefeng Wang: Nanjing University
Jianguo Wan: Nanjing University
Minhao Zhang: Nanjing University
Xing Lu: Huazhong University of Science and Technology
Tao Yang: Xi’an Jiaotong University
Fengqi Song: Nanjing University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 $${\mu }_{{{{{{\rm{B}}}}}}}$$ μ B to 5.1 $${\mu }_{{{{{{\rm{B}}}}}}}$$ μ B for the ground-state GN at an electric field strength of 3 $$-$$ − 10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.

Date: 2024
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DOI: 10.1038/s41467-024-46854-z

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