Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet

Han Wu, Lei Chen, Paul Malinowski, Bo Gyu Jang, Qinwen Deng, Kirsty Scott, Jianwei Huang, Jacob P. C. Ruff, Yu He, Xiang Chen, Chaowei Hu, Ziqin Yue, Ji Seop Oh, Xiaokun Teng, Yucheng Guo, Mason Klemm, Chuqiao Shi, Yue Shi, Chandan Setty, Tyler Werner, Makoto Hashimoto, Donghui Lu, Turgut Yilmaz, Elio Vescovo, Sung-Kwan Mo, Alexei Fedorov, Jonathan D. Denlinger, Yaofeng Xie, Bin Gao, Junichiro Kono, Pengcheng Dai, Yimo Han, Xiaodong Xu, Robert J. Birgeneau, Jian-Xin Zhu, Eduardo H. da Silva Neto, Liang Wu, Jiun-Haw Chu, Qimiao Si and Ming Yi ()
Additional contact information
Han Wu: Rice University
Lei Chen: Rice University
Paul Malinowski: University of Washington
Bo Gyu Jang: Los Alamos National Laboratory
Qinwen Deng: University of Pennsylvania
Kirsty Scott: Yale University
Jianwei Huang: Rice University
Jacob P. C. Ruff: Cornell University
Yu He: University of California
Xiang Chen: University of California
Chaowei Hu: University of Washington
Ziqin Yue: Rice University
Ji Seop Oh: Rice University
Xiaokun Teng: Rice University
Yucheng Guo: Rice University
Mason Klemm: Rice University
Chuqiao Shi: Rice University
Yue Shi: University of Washington
Chandan Setty: Rice University
Tyler Werner: Yale University
Makoto Hashimoto: SLAC National Accelerator Laboratory
Donghui Lu: SLAC National Accelerator Laboratory
Turgut Yilmaz: Brookhaven National Lab
Elio Vescovo: Brookhaven National Lab
Sung-Kwan Mo: Lawrence Berkeley National Laboratory
Alexei Fedorov: Lawrence Berkeley National Laboratory
Jonathan D. Denlinger: Lawrence Berkeley National Laboratory
Yaofeng Xie: Rice University
Bin Gao: Rice University
Junichiro Kono: Rice University
Pengcheng Dai: Rice University
Yimo Han: Rice University
Xiaodong Xu: University of Washington
Robert J. Birgeneau: University of California
Jian-Xin Zhu: Los Alamos National Laboratory
Eduardo H. da Silva Neto: Yale University
Liang Wu: University of Pennsylvania
Jiun-Haw Chu: University of Washington
Qimiao Si: Rice University
Ming Yi: Rice University

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract Non-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe5−δGeTe2. We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.

Date: 2024
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DOI: 10.1038/s41467-024-46862-z

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