Full integration of highly stretchable inorganic transistors and circuits within molecular-tailored elastic substrates on a large scale

Seung-Han Kang, Jeong-Wan Jo, Jong Min Lee, Sanghee Moon, Seung Bum Shin, Su Bin Choi, Donghwan Byeon, Jaehyun Kim, Myung-Gil Kim, Yong-Hoon Kim (), Jong-Woong Kim () and Sung Kyu Park ()
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Seung-Han Kang: Chung-Ang University
Jeong-Wan Jo: University of Cambridge
Jong Min Lee: Chung-Ang University
Sanghee Moon: Chung-Ang University
Seung Bum Shin: Sungkyunkwan University
Su Bin Choi: Sungkyunkwan University
Donghwan Byeon: Chung-Ang University
Jaehyun Kim: Dongguk University
Myung-Gil Kim: Sungkyunkwan University
Yong-Hoon Kim: Sungkyunkwan University
Jong-Woong Kim: Sungkyunkwan University
Sung Kyu Park: Chung-Ang University

Nature Communications, 2024, vol. 15, issue 1, 1-12

Abstract: Abstract The emergence of high-form-factor electronics has led to a demand for high-density integration of inorganic thin-film devices and circuits with full stretchability. However, the intrinsic stiffness and brittleness of inorganic materials have impeded their utilization in free-form electronics. Here, we demonstrate highly integrated strain-insensitive stretchable metal-oxide transistors and circuitry (442 transistors/cm2) via a photolithography-based bottom-up approach, where transistors with fluidic liquid metal interconnection are embedded in large-area molecular-tailored heterogeneous elastic substrates (5 × 5 cm2). Amorphous indium-gallium-zinc-oxide transistor arrays (7 × 7), various logic gates, and ring-oscillator circuits exhibited strain-resilient properties with performance variation less than 20% when stretched up to 50% and 30% strain (10,000 cycles) for unit transistor and circuits, respectively. The transistors operate with an average mobility of 12.7 ( ± 1.7) cm2 V−1s−1, on/off current ratio of > 107, and the inverter, NAND, NOR circuits operate quite logically. Moreover, a ring oscillator comprising 14 cross-wired transistors validated the cascading of the multiple stages and device uniformity, indicating an oscillation frequency of ~70 kHz.

Date: 2024
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DOI: 10.1038/s41467-024-47184-w

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