Giant Faraday rotation in atomically thin semiconductors

Benjamin Carey, Nils Kolja Wessling, Paul Steeger, Robert Schmidt, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch () and Ashish Arora ()
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Benjamin Carey: University of Münster
Nils Kolja Wessling: University of Münster
Paul Steeger: University of Münster
Robert Schmidt: University of Münster
Steffen Michaelis de Vasconcellos: University of Münster
Rudolf Bratschitsch: University of Münster
Ashish Arora: University of Münster

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Faraday rotation is a fundamental effect in the magneto-optical response of solids, liquids and gases. Materials with a large Verdet constant find applications in optical modulators, sensors and non-reciprocal devices, such as optical isolators. Here, we demonstrate that the plane of polarization of light exhibits a giant Faraday rotation of several degrees around the A exciton transition in hBN-encapsulated monolayers of WSe2 and MoSe2 under moderate magnetic fields. This results in the highest known Verdet constant of -1.9 × 107 deg T−1 cm−1 for any material in the visible regime. Additionally, interlayer excitons in hBN-encapsulated bilayer MoS2 exhibit a large Verdet constant (VIL ≈ +2 × 105 deg T−1 cm−2) of opposite sign compared to A excitons in monolayers. The giant Faraday rotation is due to the giant oscillator strength and high g-factor of the excitons in atomically thin semiconducting transition metal dichalcogenides. We deduce the complete in-plane complex dielectric tensor of hBN-encapsulated WSe2 and MoSe2 monolayers, which is vital for the prediction of Kerr, Faraday and magneto-circular dichroism spectra of 2D heterostructures. Our results pose a crucial advance in the potential usage of two-dimensional materials in ultrathin optical polarization devices.

Date: 2024
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DOI: 10.1038/s41467-024-47294-5

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