Remarkable flexibility in freestanding single-crystalline antiferroelectric PbZrO3 membranes

Yunting Guo, Bin Peng (), Guangming Lu, Guohua Dong, Guannan Yang, Bohan Chen, Ruibin Qiu, Haixia Liu, Butong Zhang, Yufei Yao, Yanan Zhao, Suzhi Li (), Xiangdong Ding, Jun Sun and Ming Liu ()
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Yunting Guo: Xi’an Jiaotong University
Bin Peng: Xi’an Jiaotong University
Guangming Lu: Yantai University
Guohua Dong: Xi’an Jiaotong University
Guannan Yang: Xi’an Jiaotong University
Bohan Chen: Xi’an Jiaotong University
Ruibin Qiu: Xi’an Jiaotong University
Haixia Liu: Xi’an Jiaotong University
Butong Zhang: Xi’an Jiaotong University
Yufei Yao: Xi’an Jiaotong University
Yanan Zhao: Xi’an Jiaotong University
Suzhi Li: Xi’an Jiaotong University
Xiangdong Ding: Xi’an Jiaotong University
Jun Sun: Xi’an Jiaotong University
Ming Liu: Xi’an Jiaotong University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract The ultrahigh flexibility and elasticity achieved in freestanding single-crystalline ferroelectric oxide membranes have attracted much attention recently. However, for antiferroelectric oxides, the flexibility limit and fundamental mechanism in their freestanding membranes are still not explored clearly. Here, we successfully fabricate freestanding single-crystalline PbZrO3 membranes by a water-soluble sacrificial layer technique. They exhibit good antiferroelectricity and have a commensurate/incommensurate modulated microstructure. Moreover, they also have good shape recoverability when bending with a small radius of curvature (about 2.4 μm for the thickness of 120 nm), corresponding to a bending strain of 2.5%. They could tolerate a maximum bending strain as large as 3.5%, far beyond their bulk counterpart. Our atomistic simulations reveal that this remarkable flexibility originates from the antiferroelectric-ferroelectric phase transition with the aid of polarization rotation. This study not only suggests the mechanism of antiferroelectric oxides to achieve high flexibility but also paves the way for potential applications in flexible electronics.

Date: 2024
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DOI: 10.1038/s41467-024-47419-w

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