Publisher Correction: Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates

Jing Wu, E Zhou, An Huang, Hongbin Zhang, Ming Hu and Guangzhao Qin ()
Additional contact information
Jing Wu: Hunan University
E Zhou: Hunan University
An Huang: Hunan University
Hongbin Zhang: Technische Universität Darmstadt
Ming Hu: University of South Carolina
Guangzhao Qin: Hunan University

Nature Communications, 2024, vol. 15, issue 1, 1-1

Date: 2024
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DOI: 10.1038/s41467-024-47636-3

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