Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4

Ji-Eun Lee, Aifeng Wang, Shuzhang Chen, Minseong Kwon, Jinwoong Hwang, Minhyun Cho, Ki-Hoon Son, Dong-Soo Han, Jun Woo Choi, Young Duck Kim, Sung-Kwan Mo, Cedomir Petrovic, Choongyu Hwang (), Se Young Park (), Chaun Jang () and Hyejin Ryu ()
Additional contact information
Ji-Eun Lee: Lawrence Berkeley National Laboratory
Aifeng Wang: Brookhaven National Laboratory, Upton
Shuzhang Chen: Brookhaven National Laboratory, Upton
Minseong Kwon: Korea Institute of Science and Technology (KIST)
Jinwoong Hwang: Lawrence Berkeley National Laboratory
Minhyun Cho: Kyung Hee University
Ki-Hoon Son: Korea Institute of Science and Technology (KIST)
Dong-Soo Han: Korea Institute of Science and Technology (KIST)
Jun Woo Choi: Korea Institute of Science and Technology (KIST)
Young Duck Kim: Kyung Hee University
Sung-Kwan Mo: Lawrence Berkeley National Laboratory
Cedomir Petrovic: Brookhaven National Laboratory, Upton
Choongyu Hwang: Pusan National University
Se Young Park: Soongsil University
Chaun Jang: Korea Institute of Science and Technology (KIST)
Hyejin Ryu: Korea Institute of Science and Technology (KIST)

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.

Date: 2024
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DOI: 10.1038/s41467-024-47643-4

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