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Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation

Ziyi Yu, Ningbo Fan, Zhengqian Fu (), Biao He, Shiguang Yan, Henghui Cai, Xuefeng Chen, Linlin Zhang, Yuanyuan Zhang, Bin Xu, Genshui Wang () and Fangfang Xu ()
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Ziyi Yu: Chinese Academy of Sciences
Ningbo Fan: Soochow University
Zhengqian Fu: Chinese Academy of Sciences
Biao He: Chinese Academy of Sciences
Shiguang Yan: Chinese Academy of Sciences
Henghui Cai: Chinese Academy of Sciences
Xuefeng Chen: Chinese Academy of Sciences
Linlin Zhang: Chinese Academy of Sciences
Yuanyuan Zhang: East China Normal University
Bin Xu: Soochow University
Genshui Wang: Chinese Academy of Sciences
Fangfang Xu: Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is threefold-modulated ferrielectric, which challenges the generally accepted antiferroelectric configuration. However, such a novel ferrielectric phase was predicted only to be accessible at low temperatures. Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in PbZrO3/SrTiO3 thin film. We demonstrate that the phase separation occurs spontaneously in quasi-periodic stripe-like patterns under a compressive misfit strain and can be tailored by varying the film thickness. The ferrielectric phase strikingly exhibitsa threefold modulation period with a nearly up-up-down configuration, which could be stabilized and manipulated by the formation and evolution of interfacial defects under applied strain. The present results construct a fertile ground for further exploring the physical properties and applications based on the novel ferrielectric phase.

Date: 2024
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DOI: 10.1038/s41467-024-47776-6

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