Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa, Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi and Mitsuru Takenaka ()
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Kazuma Taki: The University of Tokyo
Naoki Sekine: The University of Tokyo
Kouhei Watanabe: The University of Tokyo
Yuto Miyatake: The University of Tokyo
Tomohiro Akazawa: The University of Tokyo
Hiroya Sakumoto: The University of Tokyo
Kasidit Toprasertpong: The University of Tokyo
Shinichi Takagi: The University of Tokyo
Mitsuru Takenaka: The University of Tokyo

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as BaTiO3 offer nonvolatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor fabs is limited. Hf0.5Zr0.5O2 is an emerging ferroelectric material, which exhibits complementary metal-oxide-semiconductor compatibility. Although extensively studied for ferroelectric transistors and memories, its application to photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric Hf0.5Zr0.5O2. We observed a negative change in refractive index at a 1.55 μm wavelength in a pristine device regardless of the direction of the applied electric field. The nonvolatile phase shift was only observed once in a pristine device. This non-reversible phase shift can be attributed to the spontaneous polarization within the Hf0.5Zr0.5O2 film along the external electric field.

Date: 2024
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DOI: 10.1038/s41467-024-47893-2

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