On the quality of commercial chemical vapour deposited hexagonal boron nitride

Yue Yuan, Jonas Weber, Junzhu Li, Bo Tian, Yinchang Ma, Xixiang Zhang, Takashi Taniguchi, Kenji Watanabe and Mario Lanza ()
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Yue Yuan: King Abdullah University of Science and Technology (KAUST)
Jonas Weber: King Abdullah University of Science and Technology (KAUST)
Junzhu Li: King Abdullah University of Science and Technology (KAUST)
Bo Tian: King Abdullah University of Science and Technology (KAUST)
Yinchang Ma: King Abdullah University of Science and Technology (KAUST)
Xixiang Zhang: King Abdullah University of Science and Technology (KAUST)
Takashi Taniguchi: National Institute for Materials Science
Kenji Watanabe: National Institute for Materials Science
Mario Lanza: King Abdullah University of Science and Technology (KAUST)

Nature Communications, 2024, vol. 15, issue 1, 1-12

Abstract: Abstract The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with small thickness fluctuations, which is necessary to build electronic devices and circuits. However, CVD-grown 2D materials can contain significant amounts of lattice distortions, which degrades the performance at the device level and increases device-to-device variability. Here we statistically analyse the quality of commercially available CVD-grown hexagonal boron nitride (h-BN) from the most popular suppliers. h-BN is of strategic importance because it is one of the few insulating 2D materials, and can be used as anti-scattering substrate and gate dielectric. We find that the leakage current and electrical homogeneity of all commercially available CVD h-BN samples are significantly worse than those of mechanically exfoliated h-BN of similar thickness. Moreover, in most cases the properties of the CVD h-BN samples analysed don’t match the technical specifications given by the suppliers, and the sample-to-sample variability is unsuitable for the reproducible fabrication of capacitors, transistors or memristors in different batches. In the short term, suppliers should try to provide accurate sample specifications matching the properties of the commercialized materials, and researchers should keep such inaccuracies in mind; and in the middle term suppliers should try to reduce the density of defects to enable the fabrication of high-performance devices with high reliability and reproducibility.

Date: 2024
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DOI: 10.1038/s41467-024-48485-w

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