Inverted device architecture for high efficiency single-layer organic light-emitting diodes with imbalanced charge transport
Xiao Tan,
Dehai Dou,
Lay-Lay Chua,
Rui-Qi Png,
Daniel G. Congrave,
Hugo Bronstein,
Martin Baumgarten,
Yungui Li (),
Paul W. M. Blom and
Gert-Jan A. H. Wetzelaer ()
Additional contact information
Xiao Tan: Max Planck Institute for Polymer Research
Dehai Dou: Max Planck Institute for Polymer Research
Lay-Lay Chua: National University of Singapore
Rui-Qi Png: National University of Singapore
Daniel G. Congrave: University of Cambridge
Hugo Bronstein: University of Cambridge
Martin Baumgarten: Max Planck Institute for Polymer Research
Yungui Li: Max Planck Institute for Polymer Research
Paul W. M. Blom: Max Planck Institute for Polymer Research
Gert-Jan A. H. Wetzelaer: Max Planck Institute for Polymer Research
Nature Communications, 2024, vol. 15, issue 1, 1-7
Abstract:
Abstract Many wide-gap organic semiconductors exhibit imbalanced electron and hole transport, therefore efficient organic light-emitting diodes require a multilayer architecture of electron- and hole-transport materials to confine charge recombination to the emissive layer. Here, we show that even for emitters with imbalanced charge transport, it is possible to obtain highly efficient single-layer organic light emitting diodes (OLEDs), without the need for additional charge-transport and blocking layers. For hole-dominated emitters, an inverted single-layer device architecture with ohmic bottom-electron and top-hole contacts moves the emission zone away from the metal top electrode, thereby more than doubling the optical outcoupling efficiency. Finally, a blue-emitting inverted single-layer OLED based on thermally activated delayed fluorescence is achieved, exhibiting a high external quantum efficiency of 19% with little roll-off at high brightness, demonstrating that balanced charge transport is not a prerequisite for highly efficient single-layer OLEDs.
Date: 2024
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48553-1
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DOI: 10.1038/s41467-024-48553-1
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