Bounds to electron spin qubit variability for scalable CMOS architectures

Jesús D. Cifuentes (), Tuomo Tanttu, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Santiago Serrano, Dennis Otter, Daniel Dunmore, Philip Y. Mai, Frédéric Schlattner, MengKe Feng, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Wee Han Lim, Fay E. Hudson, Rajib Rahman, Andrew S. Dzurak and Andre Saraiva ()
Additional contact information
Jesús D. Cifuentes: University of New South Wales
Tuomo Tanttu: University of New South Wales
Will Gilbert: University of New South Wales
Jonathan Y. Huang: University of New South Wales
Ensar Vahapoglu: University of New South Wales
Ross C. C. Leon: University of New South Wales
Santiago Serrano: University of New South Wales
Dennis Otter: University of New South Wales
Daniel Dunmore: University of New South Wales
Philip Y. Mai: University of New South Wales
Frédéric Schlattner: University of New South Wales
MengKe Feng: University of New South Wales
Kohei Itoh: Keio University
Nikolay Abrosimov: Leibniz-Institut für Kristallzüchtung
Hans-Joachim Pohl: VITCON Projectconsult GmbH
Michael Thewalt: Simon Fraser University
Arne Laucht: University of New South Wales
Chih Hwan Yang: University of New South Wales
Christopher C. Escott: University of New South Wales
Wee Han Lim: University of New South Wales
Fay E. Hudson: University of New South Wales
Rajib Rahman: University of New South Wales
Andrew S. Dzurak: University of New South Wales
Andre Saraiva: University of New South Wales

Nature Communications, 2024, vol. 15, issue 1, 1-14

Abstract: Abstract Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO2 interface, compiling experiments across 12 devices, and develop theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted to describe fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded, and they lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.

Date: 2024
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DOI: 10.1038/s41467-024-48557-x

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