An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

You Meng, Weijun Wang, Rong Fan, Zhengxun Lai, Wei Wang, Dengji Li, Xiaocui Li, Quan Quan, Pengshan Xie, Dong Chen, He Shao, Bowen Li, Zenghui Wu, Zhe Yang, SenPo Yip, Chun-Yuen Wong (), Yang Lu () and Johnny C. Ho ()
Additional contact information
You Meng: City University of Hong Kong
Weijun Wang: City University of Hong Kong
Rong Fan: City University of Hong Kong
Zhengxun Lai: City University of Hong Kong
Wei Wang: City University of Hong Kong
Dengji Li: City University of Hong Kong
Xiaocui Li: City University of Hong Kong
Quan Quan: City University of Hong Kong
Pengshan Xie: City University of Hong Kong
Dong Chen: City University of Hong Kong
He Shao: City University of Hong Kong
Bowen Li: City University of Hong Kong
Zenghui Wu: City University of Hong Kong
Zhe Yang: City University of Hong Kong
SenPo Yip: Kyushu University
Chun-Yuen Wong: City University of Hong Kong
Yang Lu: City University of Hong Kong
Johnny C. Ho: City University of Hong Kong

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm2/(Vs) and robust hole transport properties, facilitated by Te-Te (Se) portions and O-Te-O portions, respectively. The nanosphere lithography process is employed to create nanopatterned honeycomb TeSeO broadband photodetectors, demonstrating a high responsibility of 603 A/W, an ultrafast response of 5 μs, and superior mechanical flexibility. The p-type TeSeO system is highly adaptable, scalable, and reliable, which can address emerging technological needs that current semiconductor solutions may not fulfill.

Date: 2024
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DOI: 10.1038/s41467-024-48628-z

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