Tunnel junctions based on interfacial two dimensional ferroelectrics

Yunze Gao, Astrid Weston, Vladimir Enaldiev, Xiao Li, Wendong Wang, James E. Nunn, Isaac Soltero, Eli G. Castanon, Amy Carl, Hugo Latour, Alex Summerfield, Matthew Hamer, James Howarth, Nicholas Clark, Neil R. Wilson, Andrey V. Kretinin (), Vladimir I. Fal’ko () and Roman Gorbachev ()
Additional contact information
Yunze Gao: The University of Manchester
Astrid Weston: The University of Manchester
Vladimir Enaldiev: The University of Manchester
Xiao Li: The University of Manchester
Wendong Wang: The University of Manchester
James E. Nunn: University of Warwick
Isaac Soltero: The University of Manchester
Eli G. Castanon: The University of Manchester
Amy Carl: The University of Manchester
Hugo Latour: The University of Manchester
Alex Summerfield: The University of Manchester
Matthew Hamer: The University of Manchester
James Howarth: The University of Manchester
Nicholas Clark: The University of Manchester
Neil R. Wilson: University of Warwick
Andrey V. Kretinin: The University of Manchester
Vladimir I. Fal’ko: The University of Manchester
Roman Gorbachev: The University of Manchester

Nature Communications, 2024, vol. 15, issue 1, 1-7

Abstract: Abstract Van der Waals heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral bilayers of transition metal dichalcogenides. Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing the fabrication of diverse ferroelectric tunnelling junction devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials, and its understanding is an important milestone for the future development of optoelectronic devices based on sliding ferroelectricity.

Date: 2024
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DOI: 10.1038/s41467-024-48634-1

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