Evidence for multiferroicity in single-layer CuCrSe2

Zhenyu Sun, Yueqi Su, Aomiao Zhi, Zhicheng Gao, Xu Han, Kang Wu, Lihong Bao, Yuan Huang, Youguo Shi, Xuedong Bai, Peng Cheng, Lan Chen (), Kehui Wu, Xuezeng Tian (), Changzheng Wu () and Baojie Feng ()
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Zhenyu Sun: Chinese Academy of Sciences
Yueqi Su: University of Science and Technology of China
Aomiao Zhi: Chinese Academy of Sciences
Zhicheng Gao: Chinese Academy of Sciences
Xu Han: Beijing Institute of Technology
Kang Wu: Chinese Academy of Sciences
Lihong Bao: Chinese Academy of Sciences
Yuan Huang: Beijing Institute of Technology
Youguo Shi: Chinese Academy of Sciences
Xuedong Bai: Chinese Academy of Sciences
Peng Cheng: Chinese Academy of Sciences
Lan Chen: Chinese Academy of Sciences
Kehui Wu: Chinese Academy of Sciences
Xuezeng Tian: Chinese Academy of Sciences
Changzheng Wu: University of Science and Technology of China
Baojie Feng: Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-7

Abstract: Abstract Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device miniaturization, there is an increasing demand for the persistence of multiferroicity in single-layer materials at elevated temperatures. Here, we report high-temperature multiferroicity in single-layer CuCrSe2, which hosts room-temperature ferroelectricity and 120 K ferromagnetism. Notably, the ferromagnetic coupling in single-layer CuCrSe2 is enhanced by the ferroelectricity-induced orbital shift of Cr atoms, which is distinct from both types I and II multiferroicity. These findings are supported by a combination of second-harmonic generation, piezo-response force microscopy, scanning transmission electron microscopy, magnetic, and Hall measurements. Our research provides not only an exemplary platform for delving into intrinsic magnetoelectric interactions at the single-layer limit but also sheds light on potential development of electronic and spintronic devices utilizing two-dimensional multiferroics.

Date: 2024
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DOI: 10.1038/s41467-024-48636-z

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