Free-standing two-dimensional ferro-ionic memristor

Jinhyoung Lee, Gunhoo Woo, Jinill Cho, Sihoon Son, Hyelim Shin, Hyunho Seok, Min-Jae Kim, Eungchul Kim, Ziyang Wang, Boseok Kang, Won-Jun Jang and Taesung Kim ()
Additional contact information
Jinhyoung Lee: Sungkyunkwan University (SKKU)
Gunhoo Woo: Sungkyunkwan University
Jinill Cho: Sungkyunkwan University (SKKU)
Sihoon Son: Sungkyunkwan University
Hyelim Shin: Sungkyunkwan University
Hyunho Seok: Sungkyunkwan University
Min-Jae Kim: Sungkyunkwan University
Eungchul Kim: Samsung Electronics
Ziyang Wang: Sungkyunkwan University (SKKU)
Boseok Kang: Sungkyunkwan University
Won-Jun Jang: Institute for Basic Science (IBS)
Taesung Kim: Sungkyunkwan University (SKKU)

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract Two-dimensional (2D) ferroelectric materials have emerged as significant platforms for multi-functional three-dimensional (3D) integrated electronic devices. Among 2D ferroelectric materials, ferro-ionic CuInP2S6 has the potential to achieve the versatile advances in neuromorphic computing systems due to its phase tunability and ferro-ionic characteristics. As CuInP2S6 exhibits a ferroelectric phase with insulating properties at room temperature, the external temperature and electrical field should be required to activate the ferro-ionic conduction. Nevertheless, such external conditions inevitably facilitate stochastic ionic conduction, which completely limits the practical applications of 2D ferro-ionic materials. Herein, free-standing 2D ferroelectric heterostructure is mechanically manipulated for nano-confined conductive filaments growth in free-standing 2D ferro-ionic memristor. The ultra-high mechanical bending is selectively facilitated at the free-standing area to spatially activate the ferro-ionic conduction, which allows the deterministic local positioning of Cu+ ion transport. According to the local flexoelectric engineering, 5.76×102-fold increased maximum current is observed within vertical shear strain 720 nN, which is theoretically supported by the 3D flexoelectric simulation. In conclusion, we envision that our universal free-standing platform can provide the extendable geometric solution for ultra-efficient self-powered system and reliable neuromorphic device.

Date: 2024
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

Downloads: (external link)
https://www.nature.com/articles/s41467-024-48810-3 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48810-3

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-024-48810-3

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().