Unusually high thermal conductivity in suspended monolayer MoSi2N4

Chengjian He, Chuan Xu, Chen Chen, Jinmeng Tong, Tianya Zhou, Su Sun, Zhibo Liu, Hui-Ming Cheng and Wencai Ren ()
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Chengjian He: Institute of Metal Research, Chinese Academy of Sciences
Chuan Xu: Institute of Metal Research, Chinese Academy of Sciences
Chen Chen: Institute of Metal Research, Chinese Academy of Sciences
Jinmeng Tong: Institute of Metal Research, Chinese Academy of Sciences
Tianya Zhou: Institute of Metal Research, Chinese Academy of Sciences
Su Sun: Institute of Metal Research, Chinese Academy of Sciences
Zhibo Liu: Institute of Metal Research, Chinese Academy of Sciences
Hui-Ming Cheng: Institute of Metal Research, Chinese Academy of Sciences
Wencai Ren: Institute of Metal Research, Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract Two-dimensional semiconductors with high thermal conductivity and charge carrier mobility are of great importance for next-generation electronic and optoelectronic devices. However, constrained by the long-held Slack’s criteria, the reported two-dimensional semiconductors such as monolayers of MoS2, WS2, MoSe2, WSe2 and black phosphorus suffer from much lower thermal conductivity than silicon (~142 W·m–1·K–1) because of the complex crystal structure, large average atomic mass and relatively weak chemical bonds. Despite the more complex crystal structure, the recently emerging monolayer MoSi2N4 semiconductor has been predicted to have high thermal conductivity and charge carrier mobility simultaneously. In this work, using a noncontact optothermal Raman technique, we experimentally measure a high thermal conductivity of ~173 W·m–1·K–1 at room temperature for suspended monolayer MoSi2N4 grown by chemical vapor deposition. First-principles calculations reveal that such unusually high thermal conductivity benefits from the high Debye temperature and small Grüneisen parameter of MoSi2N4, both of which are strongly dependent on the high Young’s modulus induced by the outmost Si-N bilayers. Our study not only establishes monolayer MoSi2N4 as a benchmark 2D semiconductor for next-generation electronic and optoelectronic devices, but also provides an insight into the design of 2D materials for efficient heat conduction.

Date: 2024
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DOI: 10.1038/s41467-024-48888-9

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