Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain

Jie Qi, Yunchi Zhao (), Yi Zhang, Guang Yang, He Huang, Haochang Lyu, Bokai Shao, Jingyan Zhang, Jialiang Li, Tao Zhu, Guoqiang Yu, Hongxiang Wei, Shiming Zhou, Baogen Shen and Shouguo Wang ()
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Jie Qi: Anhui University
Yunchi Zhao: Chinese Academy of Sciences
Yi Zhang: Chinese Academy of Sciences
Guang Yang: Beihang University
He Huang: University of Science and Technology Beijing
Haochang Lyu: University of Science and Technology Beijing
Bokai Shao: University of Science and Technology Beijing
Jingyan Zhang: University of Science and Technology Beijing
Jialiang Li: Spallation Neutron Source Science Center
Tao Zhu: Chinese Academy of Sciences
Guoqiang Yu: Chinese Academy of Sciences
Hongxiang Wei: Chinese Academy of Sciences
Shiming Zhou: Anhui University
Baogen Shen: Anhui University
Shouguo Wang: Anhui University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Achieving effective manipulation of perpendicular exchange bias effect remains an intricate endeavor, yet it stands a significance for the evolution of ultra-high capacity and energy-efficient magnetic memory and logic devices. A persistent impediment to its practical applications is the reliance on external magnetic fields during the current-induced switching of exchange bias in perpendicularly magnetized structures. This study elucidates the achievement of a full electrical manipulation of the perpendicular exchange bias in the multilayers with an ultrathin antiferromagnetic layer. Owing to the anisotropic epitaxial strain in the 2-nm-thick IrMn3 layer, the considerable exchange bias effect is clearly achieved at room temperature. Concomitantly, a specific global uncompensated magnetization manifests in the IrMn3 layer, facilitating the switching of the irreversible portion of the uncompensated magnetization. Consequently, the perpendicular exchange bias can be manipulated by only applying pulsed current, notably independent of the presence of any external magnetic fields.

Date: 2024
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DOI: 10.1038/s41467-024-49214-z

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