Cavity-enhanced single artificial atoms in silicon

Valeria Saggio (), Carlos Errando-Herranz, Samuel Gyger, Christopher Panuski, Mihika Prabhu, Lorenzo Santis, Ian Christen, Dalia Ornelas-Huerta, Hamza Raniwala, Connor Gerlach, Marco Colangelo and Dirk Englund
Additional contact information
Valeria Saggio: Massachusetts Institute of Technology
Carlos Errando-Herranz: Massachusetts Institute of Technology
Samuel Gyger: Massachusetts Institute of Technology
Christopher Panuski: Massachusetts Institute of Technology
Mihika Prabhu: Massachusetts Institute of Technology
Lorenzo Santis: Massachusetts Institute of Technology
Ian Christen: Massachusetts Institute of Technology
Dalia Ornelas-Huerta: Massachusetts Institute of Technology
Hamza Raniwala: Massachusetts Institute of Technology
Connor Gerlach: Massachusetts Institute of Technology
Marco Colangelo: Massachusetts Institute of Technology
Dirk Englund: Massachusetts Institute of Technology

Nature Communications, 2024, vol. 15, issue 1, 1-6

Abstract: Abstract Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world’s most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.

Date: 2024
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-024-49302-0 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-49302-0

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-024-49302-0

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().