Direct bandgap quantum wells in hexagonal Silicon Germanium

Wouter H. J. Peeters, Victor T. Lange, Abderrezak Belabbes, Max C. Hemert, Marvin Marco Jansen, Riccardo Farina, Marvin A. J. Tilburg, Marcel A. Verheijen, Silvana Botti, Friedhelm Bechstedt, Jos. E. M. Haverkort and Erik P. A. M. Bakkers ()
Additional contact information
Wouter H. J. Peeters: Eindhoven University of Technology
Victor T. Lange: Eindhoven University of Technology
Abderrezak Belabbes: Sultan Qaboos University
Max C. Hemert: Eindhoven University of Technology
Marvin Marco Jansen: Eindhoven University of Technology
Riccardo Farina: Eindhoven University of Technology
Marvin A. J. Tilburg: Eindhoven University of Technology
Marcel A. Verheijen: Eindhoven University of Technology
Silvana Botti: Friedrich-Schiller-Universität Jena
Friedhelm Bechstedt: Friedrich-Schiller-Universität Jena
Jos. E. M. Haverkort: Eindhoven University of Technology
Erik P. A. M. Bakkers: Eindhoven University of Technology

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract Silicon is indisputably the most advanced material for scalable electronics, but it is a poor choice as a light source for photonic applications, due to its indirect band gap. The recently developed hexagonal Si1−xGex semiconductor features a direct bandgap at least for x > 0.65, and the realization of quantum heterostructures would unlock new opportunities for advanced optoelectronic devices based on the SiGe system. Here, we demonstrate the synthesis and characterization of direct bandgap quantum wells realized in the hexagonal Si1−xGex system. Photoluminescence experiments on hex-Ge/Si0.2Ge0.8 quantum wells demonstrate quantum confinement in the hex-Ge segment with type-I band alignment, showing light emission up to room temperature. Moreover, the tuning range of the quantum well emission energy can be extended using hexagonal Si1−xGex/Si1−yGey quantum wells with additional Si in the well. These experimental findings are supported with ab initio bandstructure calculations. A direct bandgap with type-I band alignment is pivotal for the development of novel low-dimensional light emitting devices based on hexagonal Si1−xGex alloys, which have been out of reach for this material system until now.

Date: 2024
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DOI: 10.1038/s41467-024-49399-3

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