An antiferromagnetic spin phase change memory

Han Yan, Hongye Mao, Peixin Qin (), Jinhua Wang, Haidong Liang, Xiaorong Zhou, Xiaoning Wang, Hongyu Chen, Ziang Meng, Li Liu, Guojian Zhao, Zhiyuan Duan, Zengwei Zhu, Bin Fang, Zhongming Zeng, Andrew A. Bettiol, Qinghua Zhang (), Peizhe Tang (), Chengbao Jiang () and Zhiqi Liu ()
Additional contact information
Han Yan: Beihang University
Hongye Mao: Beihang University
Peixin Qin: Beihang University
Jinhua Wang: Huazhong University of Science and Technology
Haidong Liang: National University of Singapore
Xiaorong Zhou: Beihang University
Xiaoning Wang: Beihang University
Hongyu Chen: Beihang University
Ziang Meng: Beihang University
Li Liu: Beihang University
Guojian Zhao: Beihang University
Zhiyuan Duan: Beihang University
Zengwei Zhu: Huazhong University of Science and Technology
Bin Fang: Chinese Academy of Sciences
Zhongming Zeng: Chinese Academy of Sciences
Andrew A. Bettiol: National University of Singapore
Qinghua Zhang: Chinese Academy of Sciences
Peizhe Tang: Beihang University
Chengbao Jiang: Beihang University
Zhiqi Liu: Beihang University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T.

Date: 2024
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DOI: 10.1038/s41467-024-49451-2

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