Nanotransistor-based gas sensing with record-high sensitivity enabled by electron trapping effect in nanoparticles

Qitao Hu, Paul Solomon, Lars Österlund and Zhen Zhang ()
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Qitao Hu: Uppsala University
Paul Solomon: IBM T. J. Watson Research Center
Lars Österlund: Uppsala University
Zhen Zhang: Uppsala University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Highly sensitive, low-power, and chip-scale H2 gas sensors are of great interest to both academia and industry. Field-effect transistors (FETs) functionalized with Pd nanoparticles (PdNPs) have recently emerged as promising candidates for such H2 sensors. However, their sensitivity is limited by weak capacitive coupling between PdNPs and the FET channel. Herein we report a nanoscale FET gas sensor, where electrons can tunnel between the channel and PdNPs and thus equilibrate them. Gas reaction with PdNPs perturbs the equilibrium, and therefore triggers electron transfer between the channel and PdNPs via trapping or de-trapping with the PdNPs to form a new balance. This direct communication between the gas reaction and the channel enables the most efficient signal transduction. Record-high responses to 1–1000 ppm H2 at room temperature with detection limit in the low ppb regime and ultra-low power consumption of $$\sim$$ ~ 300 nW are demonstrated. The same mechanism could potentially be used for ultrasensitive detection of other gases. Our results present a supersensitive FET gas sensor based on electron trapping effect in nanoparticles.

Date: 2024
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DOI: 10.1038/s41467-024-49658-3

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