Reducing nonradiative recombination for highly efficient inverted perovskite solar cells via a synergistic bimolecular interface
Shaobing Xiong,
Fuyu Tian,
Feng Wang,
Aiping Cao,
Zeng Chen,
Sheng Jiang,
Di Li,
Bin Xu,
Hongbo Wu,
Yefan Zhang,
Hongwei Qiao,
Zaifei Ma,
Jianxin Tang,
Haiming Zhu,
Yefeng Yao,
Xianjie Liu,
Lijun Zhang (),
Zhenrong Sun,
Mats Fahlman,
Junhao Chu,
Feng Gao () and
Qinye Bao ()
Additional contact information
Shaobing Xiong: East China Normal University
Fuyu Tian: School of Materials Science and Engineering, Jilin University
Feng Wang: Linköping University
Aiping Cao: East China Normal University
Zeng Chen: Zhejiang University
Sheng Jiang: East China Normal University
Di Li: East China Normal University
Bin Xu: East China Normal University
Hongbo Wu: Donghua University
Yefan Zhang: Soochow University
Hongwei Qiao: East China Normal University
Zaifei Ma: Donghua University
Jianxin Tang: Soochow University
Haiming Zhu: Zhejiang University
Yefeng Yao: East China Normal University
Xianjie Liu: Linköping University
Lijun Zhang: School of Materials Science and Engineering, Jilin University
Zhenrong Sun: East China Normal University
Mats Fahlman: Linköping University
Junhao Chu: Institute of Optoelectronics, Fudan University
Feng Gao: Linköping University
Qinye Bao: East China Normal University
Nature Communications, 2024, vol. 15, issue 1, 1-9
Abstract:
Abstract Reducing interface nonradiative recombination is important for realizing highly efficient perovskite solar cells. In this work, we develop a synergistic bimolecular interlayer (SBI) strategy via 4-methoxyphenylphosphonic acid (MPA) and 2-phenylethylammonium iodide (PEAI) to functionalize the perovskite interface. MPA induces an in-situ chemical reaction at the perovskite surface via forming strong P-O-Pb covalent bonds that diminish the surface defect density and upshift the surface Fermi level. PEAI further creates an additional negative surface dipole so that a more n-type perovskite surface is constructed, which enhances electron extraction at the top interface. With this cooperative surface treatment, we greatly minimize interface nonradiative recombination through both enhanced defect passivation and improved energetics. The resulting p-i-n device achieves a stabilized power conversion efficiency of 25.53% and one of the smallest nonradiative recombination induced Voc loss of only 59 mV reported to date. We also obtain a certified efficiency of 25.05%. This work sheds light on the synergistic interface engineering for further improvement of perovskite solar cells.
Date: 2024
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DOI: 10.1038/s41467-024-50019-3
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