Efficient deep-blue electroluminescence from Ce-based metal halide

Longbo Yang, Hainan Du, Jinghui Li, Yiqi Luo, Xia Lin, Jincong Pang, Yuxuan Liu, Liang Gao, Siwei He, Jae-Wook Kang, Wenxi Liang, Haisheng Song, Jiajun Luo () and Jiang Tang ()
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Longbo Yang: Huazhong University of Science and Technology (HUST)
Hainan Du: Huazhong University of Science and Technology (HUST)
Jinghui Li: Huazhong University of Science and Technology (HUST)
Yiqi Luo: Huazhong University of Science and Technology (HUST)
Xia Lin: Huazhong University of Science and Technology (HUST)
Jincong Pang: Huazhong University of Science and Technology (HUST)
Yuxuan Liu: Huazhong University of Science and Technology (HUST)
Liang Gao: Huazhong University of Science and Technology (HUST)
Siwei He: Jeonbuk National University
Jae-Wook Kang: Jeonbuk National University
Wenxi Liang: Huazhong University of Science and Technology (HUST)
Haisheng Song: Huazhong University of Science and Technology (HUST)
Jiajun Luo: Huazhong University of Science and Technology (HUST)
Jiang Tang: Huazhong University of Science and Technology (HUST)

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Rare earth ions with d-f transitions (Ce3+, Eu2+) have emerged as promising candidates for electroluminescence applications due to their abundant emission spectra, high light conversion efficiency, and excellent stability. However, directly injecting charge into 4f orbitals remains a significant challenge, resulting in unsatisfied external quantum efficiency and high operating voltage in rare earth light-emitting diodes. Herein, we propose a scheme to solve the difficulty by utilizing the energy transfer process. X-ray photoelectron spectroscopy and transient absorption spectra suggest that the Cs3CeI6 luminescence process is primarily driven by the energy transfer from the I2-based self-trapped exciton to the Ce-based Frenkel exciton. Furthermore, energy transfer efficiency is largely improved by enhancing the spectra overlap between the self-trapped exciton emission and the Ce-based Frenkel exciton excitation. When implemented as an active layer in light-emitting diodes, they show the maximum brightness and external quantum efficiency of 1073 cd m−2 and 7.9%, respectively.

Date: 2024
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DOI: 10.1038/s41467-024-50508-5

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