Confinement of excited states in two-dimensional, in-plane, quantum heterostructures

Gwangwoo Kim, Benjamin Huet, Christopher E. Stevens, Kiyoung Jo, Jeng-Yuan Tsai, Saiphaneendra Bachu, Meghan Leger, Seunguk Song, Mahfujur Rahaman, Kyung Yeol Ma, Nicholas R. Glavin, Hyeon Suk Shin, Nasim Alem, Qimin Yan, Joshua R. Hendrickson, Joan M. Redwing and Deep Jariwala ()
Additional contact information
Gwangwoo Kim: University of Pennsylvania
Benjamin Huet: The Pennsylvania State University
Christopher E. Stevens: Sensors Directorate, Wright-Patterson Air Force Base
Kiyoung Jo: University of Pennsylvania
Jeng-Yuan Tsai: Northeastern University
Saiphaneendra Bachu: The Pennsylvania State University
Meghan Leger: The Pennsylvania State University
Seunguk Song: University of Pennsylvania
Mahfujur Rahaman: University of Pennsylvania
Kyung Yeol Ma: Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50
Nicholas R. Glavin: Materials and Manufacturing Directorate, Wright-Patterson Air Force Base
Hyeon Suk Shin: Sungkyunkwan University (SKKU)
Nasim Alem: The Pennsylvania State University
Qimin Yan: Northeastern University
Joshua R. Hendrickson: Sensors Directorate, Wright-Patterson Air Force Base
Joan M. Redwing: The Pennsylvania State University
Deep Jariwala: University of Pennsylvania

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission (g2(0) ~ 0.4) was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.

Date: 2024
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DOI: 10.1038/s41467-024-50653-x

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