Controlled interlayer exciton ionization in an electrostatic trap in atomically thin heterostructures

Andrew Y. Joe, Andrés M. Mier Valdivia, Luis A. Jauregui, Kateryna Pistunova, Dapeng Ding, You Zhou, Giovanni Scuri, Kristiaan De Greve, Andrey Sushko, Bumho Kim, Takashi Taniguchi, Kenji Watanabe, James C. Hone, Mikhail D. Lukin, Hongkun Park and Philip Kim ()
Additional contact information
Andrew Y. Joe: Harvard University
Andrés M. Mier Valdivia: Harvard University
Luis A. Jauregui: University of California
Kateryna Pistunova: Harvard University
Dapeng Ding: Harvard University
You Zhou: Harvard University
Giovanni Scuri: Harvard University
Kristiaan De Greve: Harvard University
Andrey Sushko: Harvard University
Bumho Kim: Columbia University
Takashi Taniguchi: National Institute for Materials Science, 1-1 Namiki
Kenji Watanabe: National Institute for Materials Science, 1-1 Namiki
James C. Hone: Columbia University
Mikhail D. Lukin: Harvard University
Hongkun Park: Harvard University
Philip Kim: Harvard University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above 2 × 1012 cm−2 can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.

Date: 2024
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DOI: 10.1038/s41467-024-51128-9

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