Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs

Xia Liu (), Berke Erbas, Ana Conde-Rubio, Norma Rivano, Zhenyu Wang, Jin Jiang, Siiri Bienz, Naresh Kumar, Thibault Sohier, Marcos Penedo, Mitali Banerjee, Georg Fantner, Renato Zenobi, Nicola Marzari, Andras Kis, Giovanni Boero and Juergen Brugger ()
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Xia Liu: École Polytechnique Fédérale de Lausanne (EPFL)
Berke Erbas: École Polytechnique Fédérale de Lausanne (EPFL)
Ana Conde-Rubio: École Polytechnique Fédérale de Lausanne (EPFL)
Norma Rivano: École Polytechnique Fédérale de Lausanne (EPFL)
Zhenyu Wang: École Polytechnique Fédérale de Lausanne (EPFL)
Jin Jiang: École Polytechnique Fédérale de Lausanne (EPFL)
Siiri Bienz: ETH Zurich
Naresh Kumar: ETH Zurich
Thibault Sohier: Université de Montpellier, CNRS
Marcos Penedo: École Polytechnique Fédérale de Lausanne (EPFL)
Mitali Banerjee: École Polytechnique Fédérale de Lausanne (EPFL)
Georg Fantner: École Polytechnique Fédérale de Lausanne (EPFL)
Renato Zenobi: ETH Zurich
Nicola Marzari: École Polytechnique Fédérale de Lausanne (EPFL)
Andras Kis: École Polytechnique Fédérale de Lausanne (EPFL)
Giovanni Boero: École Polytechnique Fédérale de Lausanne (EPFL)
Juergen Brugger: École Polytechnique Fédérale de Lausanne (EPFL)

Nature Communications, 2024, vol. 15, issue 1, 1-12

Abstract: Abstract Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective means to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van der Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS2 FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm²/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices.

Date: 2024
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DOI: 10.1038/s41467-024-51165-4

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