Unusual plastic strain-induced phase transformation phenomena in silicon

Sorb Yesudhas (), Valery I. Levitas (), Feng Lin, K. K. Pandey and Jesse S. Smith
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Sorb Yesudhas: Iowa State University
Valery I. Levitas: Iowa State University
Feng Lin: Iowa State University
K. K. Pandey: Bhabha Atomic Research Centre
Jesse S. Smith: Argonne National Laboratory, Argonne

Nature Communications, 2024, vol. 15, issue 1, 1-13

Abstract: Abstract Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied, whereas strain-induced PTs have never been studied in situ. Here, we reveal in situ various important plastic strain-induced PT phenomena. A correlation between the direct and inverse Hall-Petch effect of particle size on yield strength and pressure for strain-induced PT is predicted theoretically and confirmed experimentally for Si-I→Si-II PT. For 100 nm particles, the strain-induced PT Si-I→Si-II initiates at 0.3 GPa under both compression and shear while it starts at 16.2 GPa under hydrostatic conditions. The Si-I→Si-III PT starts at 0.6 GPa but does not occur under hydrostatic pressure. Pressure in small Si-II and Si-III regions of micron and 100 nm particles is ∼5–7 GPa higher than in Si-I. For 100 nm Si, a sequence of Si-I → I + II → I + II + III PT is observed, and the coexistence of four phases, Si-I, II, III, and XI, is found under torsion. Retaining Si-II and single-phase Si-III at ambient pressure and obtaining reverse Si-II→Si-I PT demonstrates the possibilities of manipulating different synthetic paths. The obtained results corroborate the elaborated dislocation pileup-based mechanism and have numerous applications for developing economic defect-induced synthesis of nanostructured materials, surface treatment (polishing, turning, etc.), and friction.

Date: 2024
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DOI: 10.1038/s41467-024-51469-5

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