Generation of out-of-plane polarized spin current by non-uniform oxygen octahedral tilt/rotation

Furong Han, Jing Zhang, Fan Yang, Bo Li, Yu He, Guansong Li, Youxiang Chen, Qisheng Jiang, Yan Huang, Hui Zhang, Jine Zhang, Huaiwen Yang, Huiying Liu, Qinghua Zhang, Hao Wu, Jingsheng Chen, Weisheng Zhao, Xian-Lei Sheng (), Jirong Sun () and Yue Zhang ()
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Furong Han: Beihang University
Jing Zhang: Dongguan
Fan Yang: Beihang University
Bo Li: Beihang University
Yu He: Beihang University
Guansong Li: Chinese Academy of Sciences
Youxiang Chen: Beihang University
Qisheng Jiang: Dongguan
Yan Huang: Beihang University
Hui Zhang: Beihang University
Jine Zhang: Beihang University
Huaiwen Yang: Beihang University
Huiying Liu: Beihang University
Qinghua Zhang: Chinese Academy of Sciences
Hao Wu: Dongguan
Jingsheng Chen: National University of Singapore
Weisheng Zhao: Beihang University
Xian-Lei Sheng: Beihang University
Jirong Sun: Chinese Academy of Sciences
Yue Zhang: Beihang University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract The free-field switching of the perpendicular magnetization by the out-of-plane polarized spin current induced spin-orbit torque makes it a promising technology for developing high-density memory and logic devices. The materials intrinsically with low symmetry are generally utilized to generate the spin current with out-of-plane spin polarization. However, the generation of the out-of-plane polarized spin current by engineering the symmetry of materials has not yet been reported. Here, we demonstrate that paramagnetic CaRuO3 films are able to generate out-of-plane polarized spin current by engineering the crystal symmetry. The non-uniform oxygen octahedral tilt/rotation along film’s normal direction induced by oxygen octahedral coupling near interface breaks the screw-axis and glide-plane symmetries, which gives rise to a significant out-of-plane polarized spin current. This spin current can drive field-free spin-orbit torque switching of perpendicular magnetization with high efficiency. Our results offer a promising strategy based on crystal symmetry design to manipulate spin current and could have potential applications in advanced spintronic devices.

Date: 2024
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DOI: 10.1038/s41467-024-51820-w

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