A singlet-triplet hole-spin qubit in MOS silicon

S. D. Liles (), D. J. Halverson, Z. Wang, A. Shamim, R. S. Eggli, I. K. Jin, J. Hillier, K. Kumar, I. Vorreiter, M. J. Rendell, J. Y. Huang, C. C. Escott, F. E. Hudson, W. H. Lim, D. Culcer, A. S. Dzurak and A. R. Hamilton
Additional contact information
S. D. Liles: University of New South Wales
D. J. Halverson: University of New South Wales
Z. Wang: University of New South Wales
A. Shamim: University of New South Wales
R. S. Eggli: University of Basel
I. K. Jin: University of New South Wales
J. Hillier: University of New South Wales
K. Kumar: University of New South Wales
I. Vorreiter: University of New South Wales
M. J. Rendell: University of New South Wales
J. Y. Huang: University of New South Wales
C. C. Escott: University of New South Wales
F. E. Hudson: University of New South Wales
W. H. Lim: University of New South Wales
D. Culcer: University of New South Wales
A. S. Dzurak: University of New South Wales
A. R. Hamilton: University of New South Wales

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimise spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We demonstrate rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 μs using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.

Date: 2024
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DOI: 10.1038/s41467-024-51902-9

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