Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires

Jinlei Zhang, Jiayong Zhang, Yaping Qi, Shuainan Gong, Hang Xu, Zhenqi Liu, Ran Zhang, Mohammad A. Sadi, Demid Sychev, Run Zhao, Hongbin Yang, Zhenping Wu, Dapeng Cui, Lin Wang, Chunlan Ma, Xiaoshan Wu, Ju Gao, Yong P. Chen (), Xinran Wang () and Yucheng Jiang ()
Additional contact information
Jinlei Zhang: Suzhou University of Science and Technology
Jiayong Zhang: Suzhou University of Science and Technology
Yaping Qi: Macau University of Science and Technology
Shuainan Gong: Suzhou University of Science and Technology
Hang Xu: Suzhou University of Science and Technology
Zhenqi Liu: Suzhou University of Science and Technology
Ran Zhang: Suzhou University of Science and Technology
Mohammad A. Sadi: Purdue University
Demid Sychev: Purdue University
Run Zhao: Suzhou University of Science and Technology
Hongbin Yang: Suzhou University of Science and Technology
Zhenping Wu: Beijing University of Posts and Telecommunications
Dapeng Cui: University of Tennessee
Lin Wang: Shanghai University
Chunlan Ma: Suzhou University of Science and Technology
Xiaoshan Wu: Suzhou University of Science and Technology
Ju Gao: Suzhou University of Science and Technology
Yong P. Chen: Tohoku University
Xinran Wang: Nanjing University
Yucheng Jiang: Suzhou University of Science and Technology

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter. However, we report a room-temperature ferroelectricity in quasi-one-dimensional Te nanowires. Piezoelectric characteristics, ferroelectric loops and domain reversals are clearly observed. We attribute the ferroelectricity to the ion displacement created by the interlayer interaction between lone-pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, giving rise to a self-gated ferroelectric field-effect transistor. By utilizing ferroelectric Te nanowire as channel, the device exhibits high mobility (~220 cm2·V−1·s−1), continuous-variable resistive states can be observed with long-term retention (>105 s), fast speed ( 1.92 TB/cm2). Our work provides opportunities for single-element ferroelectrics and advances practical applications such as ultrahigh-density data storage and computing-in-memory devices.

Date: 2024
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DOI: 10.1038/s41467-024-52062-6

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