Large superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire/topological Dirac semimetal planar heterostructures

Le Duc Anh (), Keita Ishihara, Tomoki Hotta, Kohdai Inagaki, Hideki Maki, Takahiro Saeki, Masaki Kobayashi and Masaaki Tanaka ()
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Le Duc Anh: The University of Tokyo, Bunkyo-ku
Keita Ishihara: The University of Tokyo, Bunkyo-ku
Tomoki Hotta: The University of Tokyo, Bunkyo-ku
Kohdai Inagaki: The University of Tokyo, Bunkyo-ku
Hideki Maki: The University of Tokyo, Bunkyo-ku
Takahiro Saeki: The University of Tokyo, Bunkyo-ku
Masaki Kobayashi: The University of Tokyo, Bunkyo-ku
Masaaki Tanaka: The University of Tokyo, Bunkyo-ku

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract High-quality superconductor/topological material heterostructures are highly desired for realisation of topological superconductivity and Majorana physics. Here, we demonstrate a method to directly draw nanoscale superconducting β-Sn patterns in the plane of a topological Dirac semimetal (TDS) α-Sn thin film by irradiating a focused ion beam and taking advantage of the heat-driven phase transition of α-Sn into superconducting β-Sn. The β-Sn nanowires embedded in a TDS α-Sn thin film exhibit a large superconducting diode effect (SDE), whose rectification ratio η reaches a maximum of 35% when the magnetic field is applied parallel to the current. The results suggest that the SDE may occur at the α-Sn/β-Sn interfaces where the TDS α-Sn becomes superconducting by a proximity effect. Our work thus provides a universal platform for investigating quantum physics and devices based on topological superconducting circuits of any shape.

Date: 2024
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DOI: 10.1038/s41467-024-52080-4

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