Quantum tunneling high-speed nano-excitonic modulator
Hyeongwoo Lee,
Sujeong Kim,
Seonhye Eom,
Gangseon Ji,
Soo Ho Choi,
Huitae Joo,
Jinhyuk Bae,
Ki Kang Kim,
Vasily Kravtsov,
Hyeong-Ryeol Park and
Kyoung-Duck Park ()
Additional contact information
Hyeongwoo Lee: Pohang University of Science and Technology (POSTECH)
Sujeong Kim: Pohang University of Science and Technology (POSTECH)
Seonhye Eom: Ulsan National Institute of Science and Technology (UNIST)
Gangseon Ji: Ulsan National Institute of Science and Technology (UNIST)
Soo Ho Choi: Institute for Basic Science (IBS)
Huitae Joo: Pohang University of Science and Technology (POSTECH)
Jinhyuk Bae: Pohang University of Science and Technology (POSTECH)
Ki Kang Kim: Institute for Basic Science (IBS)
Vasily Kravtsov: ITMO University
Hyeong-Ryeol Park: Ulsan National Institute of Science and Technology (UNIST)
Kyoung-Duck Park: Pohang University of Science and Technology (POSTECH)
Nature Communications, 2024, vol. 15, issue 1, 1-7
Abstract:
Abstract High-speed electrical control of nano-optoelectronic properties in two-dimensional semiconductors is a building block for the development of excitonic devices, allowing the seamless integration of nano-electronics and -photonics. Here, we demonstrate a high-speed electrical modulation of nanoscale exciton behaviors in a MoS2 monolayer at room temperature through a quantum tunneling nanoplasmonic cavity. Electrical control of tunneling electrons between Au tip and MoS2 monolayer facilitates the dynamic switching of neutral exciton- and trion-dominant states at the nanoscale. Through tip-induced spectroscopic analysis, we locally characterize the modified recombination dynamics, resulting in a significant change in the photoluminescence quantum yield. Furthermore, by obtaining a time-resolved second-order correlation function, we demonstrate that this electrically-driven nanoscale exciton-trion interconversion achieves a modulation frequency of up to 8 MHz. Our approach provides a versatile platform for dynamically manipulating nano-optoelectronic properties in the form of transformable excitonic quasiparticles, including valley polarization, recombination, and transport dynamics.
Date: 2024
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-52813-5
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DOI: 10.1038/s41467-024-52813-5
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