Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature

Jonghyeon Choi, Jungmin Park (), Seunghyeon Noh, Jaebyeong Lee, Seunghyun Lee, Daeseong Choe, Hyeonjung Jung, Junhyeon Jo, Inseon Oh, Juwon Han, Soon-Yong Kwon, Chang Won Ahn, Byoung-Chul Min, Hosub Jin, Choong H. Kim (), Kyoung-Whan Kim () and Jung-Woo Yoo ()
Additional contact information
Jonghyeon Choi: Ulsan National Institute of Science and Technology
Jungmin Park: Korea Advanced Institute of Science and Technology
Seunghyeon Noh: Ulsan National Institute of Science and Technology
Jaebyeong Lee: Ulsan National Institute of Science and Technology
Seunghyun Lee: Ulsan National Institute of Science and Technology
Daeseong Choe: Ulsan National Institute of Science and Technology
Hyeonjung Jung: Ulsan National Institute of Science and Technology
Junhyeon Jo: Ulsan National Institute of Science and Technology
Inseon Oh: Ulsan National Institute of Science and Technology
Juwon Han: Ulsan National Institute of Science and Technology
Soon-Yong Kwon: Ulsan National Institute of Science and Technology
Chang Won Ahn: University of Ulsan
Byoung-Chul Min: Korea Institute of Science and Technology
Hosub Jin: Ulsan National Institute of Science and Technology
Choong H. Kim: Institute for Basic Science (IBS)
Kyoung-Whan Kim: Korea Institute of Science and Technology
Jung-Woo Yoo: Ulsan National Institute of Science and Technology

Nature Communications, 2024, vol. 15, issue 1, 1-7

Abstract: Abstract Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative is to encode the information in a non-volatile magnetic state and manipulate this spin state electronically, as in spintronics. However, current spintronic devices rely on the current-driven control of magnetization, which involves Joule heating and power dissipation. This limitation has motivated intense research into the voltage-driven manipulation of spin signals to achieve energy-efficient device operation. Here, we show non-volatile control of spin-charge conversion at room temperature in graphene-based heterostructures through Fermi level tuning. We use a polymeric ferroelectric film to induce non-volatile charging in graphene. To demonstrate the switching of spin-to-charge conversion we perform ferromagnetic resonance and inverse Edelstein effect experiments. The sign change of output voltage is derived by the change of carrier type, which can be achieved solely by a voltage pulse. Our results provide an alternative approach for the electric-field control of spin-charge conversion, which constitutes a building block for the next generation of spin-orbitronic memory and logic devices.

Date: 2024
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DOI: 10.1038/s41467-024-52835-z

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