Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic

Yangliu Wu, Zhaozhuo Zeng, Haipeng Lu, Xiaocang Han, Chendi Yang, Nanshu Liu, Xiaoxu Zhao, Liang Qiao, Wei Ji (), Renchao Che, Longjiang Deng (), Peng Yan () and Bo Peng ()
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Yangliu Wu: University of Electronic Science and Technology of China
Zhaozhuo Zeng: University of Electronic Science and Technology of China
Haipeng Lu: University of Electronic Science and Technology of China
Xiaocang Han: Peking University
Chendi Yang: Fudan University
Nanshu Liu: Renmin University of China
Xiaoxu Zhao: Peking University
Liang Qiao: University of Electronic Science and Technology of China
Wei Ji: Renmin University of China
Renchao Che: Fudan University
Longjiang Deng: University of Electronic Science and Technology of China
Peng Yan: University of Electronic Science and Technology of China
Bo Peng: University of Electronic Science and Technology of China

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Multiferroic materials have been intensively pursued to achieve the mutual control of electric and magnetic properties. The breakthrough progress in 2D magnets and ferroelectrics encourages the exploration of low-dimensional multiferroics, which holds the promise of understanding inscrutable magnetoelectric coupling and inventing advanced spintronic devices. However, confirming ferroelectricity with optical techniques is challenging in 2D materials, particularly in conjunction with antiferromagnetic orders in single- and few-layer multiferroics. Here, we report the discovery of 2D vdW multiferroic with out-of-plane ferroelectric polarization in trilayer NiI2 device, as revealed by scanning reflective magnetic circular dichroism microscopy and ferroelectric hysteresis loops. The evolution between ferroelectric and antiferroelectric phases has been unambiguously observed. Moreover, the magnetoelectric interaction is directly probed by magnetic control of the multiferroic domain switching. This work opens up opportunities for exploring multiferroic orders and multiferroic physics at the limit of single or few atomic layers, and for creating advanced magnetoelectronic devices.

Date: 2024
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DOI: 10.1038/s41467-024-53019-5

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