Moiré-engineered light-matter interactions in MoS2/WSe2 heterobilayers at room temperature

Qiaoling Lin, Hanlin Fang (), Alexei Kalaboukhov, Yuanda Liu, Yi Zhang, Moritz Fischer, Juntao Li, Joakim Hagel, Samuel Brem, Ermin Malic, Nicolas Stenger, Zhipei Sun, Martijn Wubs and Sanshui Xiao ()
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Qiaoling Lin: Technical University of Denmark
Hanlin Fang: Technical University of Denmark
Alexei Kalaboukhov: Chalmers University of Technology
Yuanda Liu: Agency for Science Technology and Research (A*STAR)
Yi Zhang: Aalto University
Moritz Fischer: Technical University of Denmark
Juntao Li: Sun Yat-Sen University
Joakim Hagel: Chalmers University of Technology
Samuel Brem: Philipps-Universität Marburg
Ermin Malic: Philipps-Universität Marburg
Nicolas Stenger: Technical University of Denmark
Zhipei Sun: Aalto University
Martijn Wubs: Technical University of Denmark
Sanshui Xiao: Technical University of Denmark

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Moiré superlattices in van der Waals heterostructures represent a highly tunable quantum system, attracting substantial interest in both many-body physics and device applications. However, the influence of the moiré potential on light-matter interactions at room temperature has remained largely unexplored. In our study, we demonstrate that the moiré potential in MoS2/WSe2 heterobilayers facilitates the localization of interlayer exciton (IX) at room temperature. By performing reflection contrast spectroscopy, we demonstrate the importance of atomic reconstruction in modifying intralayer excitons, supported by the atomic force microscopy experiment. When decreasing the twist angle, we observe that the IX lifetime becomes longer and light emission gets enhanced, indicating that non-radiative decay channels such as defects are suppressed by the moiré potential. Moreover, through the integration of moiré superlattices with silicon single-mode cavities, we find that the devices employing moiré-trapped IXs exhibit a significantly lower threshold, one order of magnitude smaller compared to the device utilizing delocalized IXs. These findings not only encourage the exploration of many-body physics in moiré superlattices at elevated temperatures but also pave the way for leveraging these artificial quantum materials in photonic and optoelectronic applications.

Date: 2024
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DOI: 10.1038/s41467-024-53083-x

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