Infrared optoelectronics in twisted black phosphorus

Shouheng Chen, Zihan Liang, Jinshui Miao, Xiang-Long Yu (), Shuo Wang, Yule Zhang, Han Wang, Yun Wang, Chun Cheng, Gen Long, Taihong Wang, Lin Wang, Han Zhang () and Xiaolong Chen ()
Additional contact information
Shouheng Chen: 1088 Xueyuan Avenue
Zihan Liang: 1088 Xueyuan Avenue
Jinshui Miao: Chinese Academy of Sciences
Xiang-Long Yu: Shenzhen Campus of Sun Yat-sen University
Shuo Wang: Nanjing Tech University (NanjingTech)
Yule Zhang: Shenzhen University
Han Wang: 1088 Xueyuan Avenue
Yun Wang: 1088 Xueyuan Avenue
Chun Cheng: 1088 Xueyuan Avenue
Gen Long: Suzhou Laboratory
Taihong Wang: 1088 Xueyuan Avenue
Lin Wang: Nanjing Tech University (NanjingTech)
Han Zhang: Shenzhen University
Xiaolong Chen: 1088 Xueyuan Avenue

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Electrons and holes, fundamental charge carriers in semiconductors, dominate optical transitions and detection processes. Twisted van der Waals (vdW) heterostructures offer an effective approach to manipulate radiation, separation, and collection processes of electron-hole pairs by creating an atomically sharp interface. Here, we demonstrate that twisted interfaces in vdW layered black phosphorus (BP), an infrared semiconductor with highly anisotropic crystalline structure and properties, can significantly alter both recombination and separation processes of electron-hole pairs. On the one hand, the twisted interface breaks the symmetry of optical transition states resulting in infrared light emission of originally symmetry-forbidden optical states along the zigzag direction. On the other hand, spontaneous electronic polarization/bulk photovoltaic effect is generated at the twisted interface enabling effective separation of electron-hole pairs without external voltage bias. This is supported by first-principles calculations and repeated experiments at various twisted angles from 0 to 90°. Importantly, these phenomena can be observed in twisted heterostructures with thickness beyond two-dimensional. Our results suggest that the engineering of vdW twisted interfaces is an effective strategy for manipulating the optoelectronic properties of materials and constructing functional devices.

Date: 2024
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DOI: 10.1038/s41467-024-53125-4

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